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hexfet power mosfet dual pqfn 5x6 mm absolute maximum ratings parameter q1 max. q2 max. units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v 13 28 i d @ t a = 70c continuous drain current, v gs @ 10v 10 23 a i dm pulsed drain current 100 230 p d @t a = 25c power dissipation 2.4 3.4 w p d @t a = 70c power dissipation 1.5 2.2 linear derating factor 0.019 0.027 w/c t j operating junction and c t stg storage temperature range thermal resistance parameter q1 max. q2 max. units r jc junction-to-case 7.7 2.5 c/w r ja junction-to-ambient 53 37 20 30 -55 to + 150 applications ?
features and benefits features benefits q1 q2 v ds 30 30 v r ds(on) max (@v gs = 10v) 8.6 3.0 m q g (typical) 8.3 34 nc i d (@t a = 25c) 13 28 a increased power density (50% vs two pqfn 5x6) low charge control mosfet (8.3 nc typical) lower switching losses low r dson synchronous mosfet (< 3.0 m ) results in lower conduction losses 100% rg tested ? 0.9 mm) increased power density compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl2, consumer qualification increased reliability control and synchronous fet in one package

form quantity irfh7911trpbf pqfn 5mm x 6mm tape and reel 4000 irfh7911tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice # 259 orderable part number package type standard pack note !"# $

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static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage q1&q2 30 ??? ??? v ? . 1 0.01 0.0 1 . . 11.1 1. . .0 . .0 1 1. . 1 . . 1 1.0 a q1&q2 ??? ??? 150 i gss gate-to-source forward leakage q1&q2 ??? ??? 100 na gate-to-source reverse leakage q1&q2 ??? ??? -100 gfs forward transconductance q1 17 ??? ??? s q2 106 ??? ??? q g total gate charge q1 ??? 8.3 12 q2 ??? 34 51 q gs1 pre-vth gate-to-source charge q1 ??? 2.0 ??? q1 q2 ??? 7.9 ??? v ds = 15v q gs2 post-vth gate-to-source charge q1 ??? 1.0 ??? nc v gs = 4.5v, i d = 10a q2 ??? 3.6 ??? q gd gate-to-drain charge q1 ??? 3.2 ??? q2 q2 ??? 11 ??? v ds = 15v q godr gate charge overdrive q1 ??? 2.1 ??? v gs = 4.5v, i d = 21a q2 ??? 12 ??? q sw switch charge (q gs2 + q gd ) q1 ??? 4.2 ??? q2 ??? 15 ??? q oss output charge q1 ??? 5.0 ??? nc q2 ??? 19 ??? r g gate resistance q1 ??? 1.8 ??? 0. 1 1 1 1 10 1 1 1 . 1 1 1 100 0 1 0 0 1 110 0 avalanche characteristics parameter q1 max. q2 max. units e as single pulse avalanche energy 12 32 mj i ar avalanche current 10 21 a diode characteristics parameter min. typ. max. units i s continuous source current q1 ??? ??? 3.0 a (body diode) q2 ??? ??? 3.0 i sm pulsed source current q1 ??? ??? 100 a (body diode) q2 ??? ??? 230 v sd diode forward voltage q1 ??? ??? 1.0 v q2 ??? ??? 1.0 t rr reverse recovery time q1 ??? 13 20 ns q2 ??? 20 29 q rr reverse recovery charge q1 ??? 13 20 nc q2 ??? 24 36 v gs = 4.5v, i d = 10a v gs = 4.5v, i d = 21a v ds = 15v, i d = 21a v dd = 15v, v gs = 4.5v v gs = 10v, i d = 26a q1: v ds = v gs , i d = 25 a v ds = 15v, i d = 10a v ds = 24v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 12a mosfet symbol q2: v ds = v gs , i d = 100 a v ds = 16v, v gs = 0v q1 v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions q2 ??? q1 t j = 25c, i f = 10a, v dd = 15v, di/dt = 280a/ s t j = 25c, i s = 10a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i s = 21a, v gs = 0v q2 t j = 25c, i f = 21a, v dd = 15v, di/dt = 300a/ s v dd = 15v, v gs = 4.5v r g =1.8 1 1. 0 1.0 typ.
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fig 2. typical output characteristics fig 1. typical output characteristics q1 - control fet q2 - synchronous fet typical characteristics fig 3. typical output characteristics fig 4. typical output characteristics fig 5. typical transfer characteristics fig 6. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60 s pulse width tj = 150c 2.3v 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60 s pulse width tj = 25c 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60 s pulse width tj = 150c 2.3v 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60 s pulse width tj = 25c 2.3v
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q1 - control fet q2 - synchronous fet typical characteristics fig 7. typical capacitance vs. drain-to-source voltage fig 8. typical capacitance vs. drain-to-source voltage fig 9. typical gate charge vs. gate-to-source voltage fig 10. typical gate charge vs. gate-to-source voltage fig 11. maximum safe operating area fig 12. maximum safe operating area 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds= 15v i d = 10a 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20406080100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds= 15v i d = 21a 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec
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fig 17. typical on-resistance vs.gate voltage q1 - control fet q2 - synchronous fet typical characteristics fig 13. normalized on-resistance vs. temperature fig 14. normalized on-resistance vs. temperature fig 15. typical source-drain diode forward voltage fig 16. typical source-drain diode forward voltage fig 18. typical on-resistance vs.gate voltage 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.10 1.00 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 13a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.10 1.00 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 26a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 26a v gs = 10v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 12a v gs = 10v
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q1 - control fet q2 - synchronous fet typical characteristics fig 19. maximum drain current vs. ambient temp. fig 20. maximum drain current vs. ambient temp. fig 21. threshold voltage vs. temperature fig 22. threshold voltage vs. temperature fig 23. maximum avalanche energy vs. drain current fig 24. maximum avalanche energy vs. drain current -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25 a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.3a 3.1a bottom 10a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.4a 6.6a bottom 21a 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 14 i d , d r a i n c u r r e n t ( a ) 25 50 75 100 125 150 t a , ambient temperature (c) 0 5 10 15 20 25 30 i d , d r a i n c u r r e n t ( a )
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fig 25. maximum effective transient thermal impedance, junction-to-ambient (q1) fig 26. maximum effective transient thermal impedance, junction-to-ambient (q2) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc
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fig 30a. switching time test circuit fig 30b. switching time waveforms fig 29b. unclamped inductive waveforms fig 29a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 31a. gate charge test circuit fig 31b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 28.

for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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%% ? "#""&# d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90% 10% v gs t d(on) t r t d(off) t f '( 1 ) $
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pqfn 5x6 outline "c" part marking pqfn 5x6 outline "c" package details note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) for footprint and stencil design recommendations, please refer to application note an-1136 at http://www.irf.com/technical-info/appnotes/an-1136.pdf
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pqfn 5x6 outline "c" tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, q1: l = 0.23mh, r g = 25 , i as = 10a; q2: l = 0.15mh, r g = 25 , i as = 21a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. * !" ? qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standard at the time of product release. ???? higher msl ratings may be available for the specific package types listed here. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ms l2 ???? (per j e d e c j-s td-020d ?? ? ) r ohs compliant yes pqfn 5mm x 6mm qualificat ion information ? m oistu re sensit ivity l evel qualification level cons umer ?? (per j e de c je s d47 f ?? ? gui del ines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 1/8/2010 ? pin number on front page drawing has been corrected 7/15/2010 ? msl2 consumer qualification on page1 has been corrected 10/25/2011 ? link from an-1152 to an-1136 on page 9 has been corrected ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? updated data sheet based on corporate template. 5/9/2014

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